Polycrystalline silicon directional solidification furnace (abbreviated as crystallizer)

Main Uses

Manufacturing solar-grade silicon ingots, and can also be used for purifying other semiconductor materials.

Main Features

1. High control precision, adjustable crystallization speed

2. Graphite resistance or induction heating melting method is adopted, increasing solution stirring, and the melting speed is fast

3. Special heating power supply is used for directional solidification insulation

4. With three-phase current balance, low maintenance cost

5. Using a constant temperature controller, 148 segments of heating process curves can be set

6. The furnace chamber uses a high-vacuum furnace body, with high vacuum degree and fast exhaust speed

Technical Parameters

● Melting capacity: 10-450KG

● Power: 40-450KW

● Design temperature: ≥1700℃

● Operating temperature: 1550℃

● Heating rate: 40℃/Min

● Furnace temperature uniformity: ±5℃

● Ultimate vacuum: 6.67×10-2Pa

● Pressure rise rate: 0.01PaL/S

● Rated inflation pressure: 0.05Mpa

● Ingot casting method: Crucible descent/Insulation bucket lifting directional solidification

● Servo control range: 0.01mm-6mm/Min

● Directional solidification rate: 0.01mm-0.5mm/Min

● Crucible fast return speed: 80-100 mm/Min

Industry Applications

The products have been widely used in melting, heating, quenching, high-temperature sintering, brazing, hot-fitting processing, semiconductor purification and other thermal processing occasions; serving the petroleum and natural gas, thermal power and nuclear power, metal casting, iron and steel metallurgy, automobile, engineering machinery, wind/hydropower generation, railway, aerospace, 3D metal printing, precious metals, cemented carbide, solar thin-film batteries and other industries.